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HANBit
HF08-CS2501
FLASH-ROM MODULE 8MByte (2M x 32-Bit), 80pin-SIMM, 5V Part No. HF08-CS2501
GENERAL DESCRIPTION
The HF08-CS2501 is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 80-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL compatible.
FEATURES
w Access time : 75, 90 and 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 5V 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection w The used device is Am29F016B PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 -90 20 21 M 22 23 24 25 26 27 VSS VCC NC A3 A2 A1 A0 DQ0 DQ1 DQ2 DQ3 VSS DQ4 DQ5 DQ6 DQ7 /OE0 /WE0 A4 A5 A6 A7 A8 A9 VSS A10 DQ15
PIN ASSIGNMENT
SYMBOL PIN 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 SYMBOL DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 /CE0 VCC PD5 A11 A12 A13 A14 A15 VSS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 NC A16 VSS 80-PIN SIMM TOP VIEW PIN 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 SYMBOL A17 A18 A19 A20 /CE1 /WE1 /OE1 VSS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 NC VCC NC NC PD1 PD2 PD3 VSS PD4 VSS
OPTIONS
w Timing 90ns access w Packages 80-pin SIMM
MARKING
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FUNCTIONAL BLOCK DIAGRAM
HF08-CS2501
32 DQ0 - DQ31 21 A0 - A20 A0-20 DQ 0-7 /WE0 /WE /OE /CE RY-BY /Reset
U1
A0-20 DQ 8-15
/WE0
/OE0
/WE /OE /CE
U2
/RY-BY0
RY-BY /Reset
A0-20 DQ16-23 /WE1 /WE /OE /CE RY-BY /Reset
U3
A0-20 DQ24-31 /WE1 /OE1 /CE0 RY-/BY1 /Reset /WE /OE /CE RY-BY /Reset
U4
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TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE or ERASE NOTE: X means don't care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Q D
HF08-CS2501
POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature Operating Temperature SYMBOL VIN,OUT VCC TSTG TA RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +125oC -55oC to +125 oC
Power Dissipation PD 4W w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Vcc for 10% device Supply Voltages Ground SYMBOL Vcc VSS MIN 4.5V 0 0 TYP. MAX 5.5V 0
DC AND OPERATING CHARACTERISTICS (0oC TA 70 oC ; Vcc = 5V 0.5V )
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max
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TEST CONDITIONS Vcc=Vcc max, VIN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH,
SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 VLKO
MIN
MAX 1.0 1.0
UNITS A A V
2.4 0.45 40 60 1.0 3.2 4.2
V mA mA mA V
/CE= VIH
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ERASE AND PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. 1 MAX. UNIT
HF08-CS2501
COMMENTS Excludes 00H programming
8
sec prior to erasure Excludes system-level overhead Excludes system-level
Byte Programming Time
-
7
300
s
Chip Programming Time
-
14.4
43.2
sec overhead
TSOP CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance
o
MIN 6 8.5 7.5
MAX 7.5 12 9
UNIT pF pF pF
VIN = 0 VOUT = 0 VIN = 0
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS u Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min 0 0 ns /OE = VIL Max Max Max Max 70 40 20 20 90 40 20 20 ns ns ns ns Read Cycle Time /CE = V IL Max 70 90 ns Min 70 90 ns DESCRIPTION TEST SETUP -75 -90 UNIT
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TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, 100 CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 20 0.45-2.4 0.8 2.0 5.0V ALL SPEED OPTIONS 1TTL gate
HF08-CS2501
UNIT
pF ns V V V
2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
Erase/Program Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tGHWL tCS tCH tWP tWPH tWHWH1 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Min Min Min Min Min Min Min Min Min Min Min Typ 70 0 40 40 0 0 0 0 0 40 20 7 90 0 45 45 0 0 0 0 0 45 20 7 ns ns ns ns ns ns ns ns ns ns ns s DESCRIPTION -75 -90 UNIT
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tWHWH2 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Pro tect operations Sector Erase Operation (Note1) Vcc set up time Typ Min 1 50
HF08-CS2501
1 50 sec s
u Erase/Program Operations Alternate /CE Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ 70 0 40 40 0 0 0 0 0 40 20 7 1 90 0 45 45 0 0 0 0 0 45 20 7 1 ns ns ns ns ns ns ns ns ns ns ns s sec -75 -90 UNIT
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u READ OPERATIONS TIMING
HF08-CS2501
u RESET TIMING
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u PROGRAM OPERATIONS TIMING
HF08-CS2501
u CHIP/SECTOR ERASE OPERATION TIMINGS
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u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HF08-CS2501
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HF08-CS2501
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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PACKAGE DIMENSIONS
HF08-CS2501

0.25 mm MAX
2.54 mm MIN
1.27
Gold: 1.040.10 mm Solder: 0.9140.10 mm
1.27(0.08)
(Solder & Gold Plating)
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ORDERING INFORMATION
HF08-CS2501
Part Number
Density
Org.
Package
Component Number 4EA
Vcc
SPEED
HF08-CS2501
8MByte
2Mx32bit
80Pin-SIMM
5.0V
90ns
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